| 摘要 |
<p>PURPOSE:To obtain chips as many as possible by a method wherein parallel small grooves from the surface reaching a pn-junction is formed on the substrate surface and it is bent and splitted. CONSTITUTION:An Si substrate 1 is supported by vacuum attraction and small grooves 3 reaching the position deeper than the pn-junction 2 are formed lengthwise and crosswise, and then, the attraction is released. Next thereto, it is bent sequentially lengthwise and crosswise to form square chips. The distortion layer produced out of this bending has no relation to the pn-junction and the effect upon the pn- junction given by the saw machining is approximately 5mum which is eliminated through a slight etching. In this way, the wafer utilization area increases and the operation is permitted only with the vacuum attraction, thus, resulting in the reduction of engineering process.</p> |
