| 摘要 |
PURPOSE:To effectively utilize a substrate when forming semiconductor elements on a largeer diameter semiconductor substrate employing a large diameter mask patterns by installing smaller diameter mask patterns on the substrate invalid area located at the outside thereof. CONSTITUTION:A glass mask substrate 5 posessing large diameter mask patterns 6 consisting of gate regions 12 and cathode regions 13 is mounted upon a large diameter semiconductor substrate 9, and then, a SiO2 film on the surface of element such as thyristor and the like formed on the semiconductor substrate 9 is removed through etching. At this time, multi pieces of the mask pattern 6 are installed on the mask substrate 5, however, there can be usually produced an invalid area to be disused between these. Therefore, in these areas, small diameter mask patterns 10 possessing gate regions 12 and cathode regions 13 are installed and utilizing these a small type thyristors are formed. |
