| 摘要 |
PURPOSE:To accelerate the operation of a semiconductor integrated circuit device by integrating a Schottky diode for limiting the theoretical amplitude of the inegrated circuit on the same semiconductor wafer when integrating electrostatic induction transistors and lateral bipolar transistors on the wafer. CONSTITUTION:An n-type layer 12 is epitaxially grown on an n<+>-type silicon substrate 11, coated with a laminated film having an SiO2 film 13 and an Si3N4 film 14, predetermined openings are perforated at these films 13 and 14, and a thin SiO2 film 15 is coated on the surface of the layer 12 thus exposed. Then, a mast of resist film 161 is formed, ion is implanted through the film 15 to form thereby a p<+>-type region 17 serving as a collector of a gate and lateral element of an electrostatic induction element and a p<+>-type emitter region 18 of the lateral element in the vicinity of the region 17. Then, the film 161 is further modified into a film 162, n<+>-type drain regions 191 and 192 of the electrostatic induction element are provided, the film 162 is removed, openings are perforated on the films 14 and 15, electrodes 201-205 are mounted at the respective regions, the electrode 205 is brought into contact with the layer 12 to form thus a Schottky diode. Thus, the diode is connected to the electrode 202 to construct a signal input terminal. |
