| 摘要 |
The voltage division ratio provided by the conversion circuit is determined in one embodiment by a pair of N-channel MIS transistors which are connected in series with resistances. A predetermined proportion of the supply voltage is output from the junction node of the two resistances to the gate of the output Nchannel MIS transistor. The transistors are all formed by the same processes on a semiconductor substrate and are therefore considered to exhibit the same threshold voltage.
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