| 摘要 |
PURPOSE:To reduce the writing power of a junction collapsible type programmable ROM by providing locally a thin transition metal film between an emitter layer and an aluminum electrode and an eutectic projecting into the emitter layer at a thin film portion. CONSTITUTION:A base layer 2 and an emitter layer 3 are formed in an n-type epitaxial layer 1 on a p-type silicon substrate, and an opening is perforated in an oxide film 4. When a titanium thin film 8 is then formed on this substrate, the film 8 is extremely thin at the corner of a crossover with the film 4 in the periphery of the exposed layer 3. Accordingly, aluminum and silicon carry out locally strongly an eutectic reaction in this portion to thus form an eutectic 7 projected in spike state. When a voltage is applied to an aluminum electrode 6 at writing time, a current is concentrically flown from the end of the eutectic 7 to thereby readily collapse the emitter and base injection. The film 8 may be formed with scratch added to the film 8. |
