| 摘要 |
PURPOSE:To enhance the sensitivity of positive type resist when producing semiconductor device, by coating the wafer with positive type resist having secondary or tertiary CH to which photo-crosslinking agent is added by about 1-10%, and exposing by radiating electron beam or the like after photo-crosslink reaction. CONSTITUTION:A positive type resist having secondary or tertiary CH such as positive type resist PBS (polybutene sulfone) in formula I is added with photo- crosslinking agent in formula II [2,6-di(4-azidobenzylidene)cyclohexanone] or the like by 1-10%, and applied on a wafer. After baking at 120 deg.C, ultraviolet rays are uniformly radiated to cause photo-crosslink reaction, then electron beam or the like is selectively radiated on the resist. Then, the resist is developed in developing solution (such as mixture of 5-methyl-2-hexanone and 2-pentanone). Thus, using a small quantity of radiation, the production of semiconductor device not causing swelling of pattern when developing, not dissolving the unexposed part at all, excelling in heat resistance and dry etching resistance, and having fine pattern may be facilitated. |
