| 摘要 |
PURPOSE:To simplify the fabricating step and enable precise display of a light emitting diode display device by providing part of LED electrode or an isolating diffused layer through the substrate from front to back surfaces using Si or GaAs or the like as the substrate. CONSTITUTION:With SiO2 films 2, 3 as masks n<+>-type diffused layer 4 is formed through a p-type silicon substrate 1 from front to back surfaces inexpensively obtained, and contacted with an electrode 8 on the back surface. An n-type GaAs layer 5 and a p-type GaAs layer 6 are epitaxially formed on the surface of the layer 4. When oxygen is added together with S and Zn as dopants at this time, a red LED can be obtained. Further, an ohmic electrode 9 is connected, lead wires 10 are connected commonly with respective rows perpendicularly with the electrode 8 in a direction Y, and the ends of the wires 10 are connected to a pad 12. Thus, the LED 11 can be extremely simplified in isolation and electrode disposition structure to thereby readily obtain a matrix type display device. Since the silicon is opaque for visible light, this device can display sharply. |
