| 摘要 |
PURPOSE:To form a fine evenly etched pattern with a high accuracy by treating material to be etched with an organic liquid having an affinity both to the resist and etching liquid after a resist pattern is formed thereon. CONSTITUTION:A chrome film 12 and a chrome oxide film 13 are evaporated on a glass substrate 11 in sequence to form a mask base material. Thereafter, a resist film is formed on the mask base material. Then, an electron beam is irradiated on a desired portion of the resist film to engrave a pattern. Thus, a resist pattern 14 is formed. At the same time, a scum 15 is left on the pattern region. Then, after immersed into an organic solution having an affinity both to the resist and etching liquid, the mask base material under-goes a wet etching to make a photomask. Accordingly, it is possible to form a mask pattern 16 of high quality with a high accuracy which follows closely to the resist pattern 14. |
