| 摘要 |
<p>PURPOSE:To enable the injection of electrons with the power supply of low electric field, by constituting the floating gate with the metal of high melting point and high conductivity by taking the first insulation layer as specified thickness, grounding the gate electrode and applying a given voltage to the drain. CONSTITUTION:The silicon oxide layer 4 being the first isolation layer is made to the thickness of about 200Angstrom greater than the conductive region in which tunnel effect is dominant, and the floating gate 5 is made with the metal such as molybdenum greater in the high melting point and conductivity. In case of charge injection, the gate electrode 7 is grounded, the reverse voltage lower than the avalanche breakdown voltage of pn-junction between the source, drain and the substrate, i.e., -20V is fed to the source, drain 2, 3, to inject electrons to the floating gate 5 from the source, drain, 2, 3, via the silicon oxide film 4. Accordingly, to the peripheral circuit of memory cell, special consideration is not required for the dielectric voltage.</p> |
