发明名称 |
Trimming method for resistance value of polycrystalline silicon resistors especially used as semiconductor integrated circuit resistors |
摘要 |
Current having a density higher than a critical value is passed through a polycrystalline resistor doped with impurities at a concentration higher than a critical value to decreasingly correct the initial value of the resistance, thereby trimming the resistance value of the resistor. When the resistor is used in a semiconductor integrated circuit, the current is passed through the existing (not additional) terminals of the integrated circuit.
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申请公布号 |
US4210996(A) |
申请公布日期 |
1980.07.08 |
申请号 |
US19780900300 |
申请日期 |
1978.04.26 |
申请人 |
NIPPON TELEGRAPH & TELEPHONE PUB CORP |
发明人 |
AMEMIYA, YOSHIHITO;KATO, KOTARO |
分类号 |
H01L27/04;H01C17/22;H01L21/02;H01L21/326;H01L21/822;H01L27/01 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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