发明名称 Trimming method for resistance value of polycrystalline silicon resistors especially used as semiconductor integrated circuit resistors
摘要 Current having a density higher than a critical value is passed through a polycrystalline resistor doped with impurities at a concentration higher than a critical value to decreasingly correct the initial value of the resistance, thereby trimming the resistance value of the resistor. When the resistor is used in a semiconductor integrated circuit, the current is passed through the existing (not additional) terminals of the integrated circuit.
申请公布号 US4210996(A) 申请公布日期 1980.07.08
申请号 US19780900300 申请日期 1978.04.26
申请人 NIPPON TELEGRAPH & TELEPHONE PUB CORP 发明人 AMEMIYA, YOSHIHITO;KATO, KOTARO
分类号 H01L27/04;H01C17/22;H01L21/02;H01L21/326;H01L21/822;H01L27/01 主分类号 H01L27/04
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