| 摘要 |
PURPOSE:To remove gallium sticking to a substrate subjected to liquid phase epitaxial growth from a solution using gallium as a solvent, without exerting any undesirable influence upon the substrate by using an etching reagent containing phosphoric acid, acetic acid and nitric acid. CONSTITUTION:A treating liquid is obtained through mixing phosphoric acid, acetic acid and nitric acid at, for example, 5:4:1 in volumetric ratio, and a substrate for which an epitaxial layer of III-V groups compound like GaP is formed according to liquid phase epitaxial process using Ga as a solvent is soaked in said treating liquid kept at room temperature. Ga, if sticking, will react violently to the treating liquid and is thus eliminated within a few minutes to thirty minutes or so according to the quantity contained. In this case the GaP substrate also comes in contact with the treating liquid, however, the GaP substrate itself scarcely reacts to the treating liquid, and the surface of formed epitaxial layer keeps the same condition as it was at first. |
