| 摘要 |
PURPOSE:To prevent the arriving of charge injected from protecting diodes at storage transferring parts and prevent the drop of S/N by separating electrically the protecting diodes connected with voltage supply lines from the storage transferring parts. CONSTITUTION:Storage transferring parts are formed of electrodes 131-133 formed on an insulating film 12 on the surface of a p-type silicon substrate 11. On the other hand, protecting diodes connected with voltage supply lines 141-143 to the electrodes 131-133 are formed in a region separated perfectly from the other parts of the substrate 11 by an n<+>-layer 15. The diode is obtained by diffusion forming an n<+>-type layer 17 in an insular p-type layer 16. An n side terminal electrode 191 is connected with a voltage supply line 141 and a p side terminal electrode 192 is connected to the earth potential. And applying positive voltage to the terminal electrode 193 of the n<+>-type layer 15, the insular p-type layer 16 and the n<+>-type layer 15 are biased reversely. By so doing, electrons injected into the p-type layer 16 do not arrive at the storage transferring parts and the drop of the S/N of output signal can be prevented. |
