| 摘要 |
PURPOSE:To provide the title dry etching process of resist with high etching rate by a method wherein the resist is plasma-etched using a gas comprising nitrogen or nitrogen exceeding 50vol.% mixed with any other gasses. CONSTITUTION:A mixed gas mainly comprising nitrogen substituting for oxygen or nitrogen exceeding 50vol.% mixed with any other balancing gasses is applied to this dry etching process. As for the balancing gasses, hydrogen, ozone, halogenated carbon, ammonia, halogenated nitrogen, nitrogen oxide or inert gas or two kinds of said gasses mixed with each other are applicable. Through these procedures, the etching rate of resist can be accelerated faster than that of oxygen plasma. Furthermore, said mixed gasses not to be oxidized different from the oxygen plasma have no effect on any applicable metal vulnerable to oxidation inside a device doing no damage to various annexed equipments in an etching device. |
