发明名称 ELECTRON BEAM EXPOSURE METHOD
摘要 PURPOSE:To obtain a ring type pattern of electron beam by applying a high-speed electron beam while expanding the same to a pattern mask consisting of a permeable secondary electron generating material and an electron shielding material having a predetermined pattern. CONSTITUTION:A permeable secondary electron generating material 3 consisting of KCl is evaporated via an Al conductor 2 on a supporting insulator 1 which can be thinned and which consists of Al2O3 having a high electron beam permeability. An electron beam shielding material 4 consisting of Au is then provided on the secondary electron generating material 3 such as to obtain a predetermined pattern 5, and a pattern mask 6 is applied to an exposed outer surface of the insulator 1. Then, a high-speed electron beam is applied from an electron gun 8 to the mask 6 which expanding the electron beam by electron lens 9-11 to allow a multiplied amount of permeable secondary electron to occur on the whole surface of the secondary electron generating material 3. Since the secondary electron generating material 3 is provided on its outer surface with the electron beam shielding material 4, the secondary electron is generated in the form of a ring from the pattern 5 only.
申请公布号 JPS5587432(A) 申请公布日期 1980.07.02
申请号 JP19780163151 申请日期 1978.12.26
申请人 FUJITSU LTD 发明人 FURUKAWA YASUO;GOTOU YOSHIAKI
分类号 H01L21/027;H01J37/073;H01J37/317 主分类号 H01L21/027
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