发明名称 |
Epitaxial tunnels from intersecting growth planes |
摘要 |
Epitaxial tunnels may be formed in crystalline bodies of crystalline materials by growth of the material on a substrate having two intersecting crystallographic planes that exhibit rapid epitaxial growth and by maintaining the growth until the structure forming along those planes closes, thereby producing a tunnel. P-n junction structures can be made in semiconductor devices by appropriate techniques.
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申请公布号 |
US4210470(A) |
申请公布日期 |
1980.07.01 |
申请号 |
US19790048245 |
申请日期 |
1979.06.13 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORP |
发明人 |
MARINACE, JOHN C |
分类号 |
G01D15/18;H01L21/20;H01L29/04;H01L29/06;H01L33/20;(IPC1-7):H01L29/04 |
主分类号 |
G01D15/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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