发明名称 |
Manufacturing process of semiconductor devices |
摘要 |
Process of manufacturing semiconductor devices by providing on the surface of a substrate of one conductivity at first only a covering with a doping agent of the other conductivity and then, after the building of mesas, the PN-junction is formed by diffusion in an oxidizing atmosphere whereby simultaneously a protecting SiO2 layer is formed on the free surface of the mesa. |
申请公布号 |
US4210472(A) |
申请公布日期 |
1980.07.01 |
申请号 |
US19780961355 |
申请日期 |
1978.11.16 |
申请人 |
ITT INDUSTRIES INC |
发明人 |
HOFFMANN, HANS;KRIEGER, PETER |
分类号 |
H01L21/225;H01L21/316;H01L21/329;H01L21/56;H01L29/861;(IPC1-7):H01L21/22 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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