| 摘要 |
PURPOSE:To plate securely an upper electrode formed over a lower electrode by removing an overhang part formed around the lower electrode when manufacturing a capacitor. CONSTITUTION:On a semiconductor substrate 1, a multi-layer metallizing layer 2 consisting of chromium, platinum and gold from the bottom is coated, and on the layer, a resist layer 3 with a hole 4 is provided, and making the layer 2 negative, the layer is plated selectively and lower electrode 5 of gold thicker than the layer 3 is formed. At this time, on the rim of the hole 4, an unnecessary brim 5' is formed. Therefore, on the layer 5, a resist layer 10 of a size corresponding to the hole 4 is formed again and the brim 5' is removed by etching with the mixed liquid of potassium iodide. After that, the layer 3 is removed, and on the whole surface including the layer 5 whose side face is exposed too, a chromium layer 6 is coated, then the layer surface is covered with a dielectric silica film 7 and a Cr-Pt-Au metallizing layer 8, and providing a resist layer 11 on both sides, an upper electrode 12 is formed by plating using the layer 8 as a negative electrode. Next, the layer 11 and the unnecessary parts of the layers 7 and 8 are removed. |
