| 摘要 |
1. A semiconductor arrangement for devices having a Schottky contact with controlled characteristics, e.g., for a Schottky diode structure, comprising an epitaxial layer (4) of a first conductivity type (e.g., N) and a first doping concentration overlying a semiconductor substrate (2), the epitaxial layer (4) being followed by an insulating layer (6) having in the area provided for the Schottky contact an opening (12) which is surrounded by inclined sidewalls (13) of the insulating layer (6) and which is occupied by a metallic contact forming a rectifying junction with the material of the epitaxial layer, and with an implanted doping region (24) in the region of the opening in the epitaxial layer, whose concentration profile perpendicular to the substrate surface has a substantially Gaussian distribution, whose maximum value in the inside region of the opening has a predetermined distance from the surface of the epitaxial layer, which is a function of the selected value of the barrier voltage, characterized in that the implanted doping region (24) in the inside region of the opening (12) on the surface of the epitaxial layer (4) has a second doping concentration which is 2 to 10 times greater than the first doping concentration in the epitaxial layer outside the implanted doping region, and wherein in the outside region adjacent to the opening at the interface between insulating layer (6) and epitaxial layer (4) there is an at least 10 times higher third doping concentration compared to the second doping concentration, and that the distance of the maximum value of the Gaussian distribution from the surface of the epitaxial layer of the respective surface structure following the insulating layer decreases from the inside to the outside region of the opening in such a manner that the maximum value in the outside region is close to the interface but inside the epitaxial layer. |
