发明名称 CRACKING METHOD OF SEMICONDUCTOR SUBSTRATE
摘要 <p>PURPOSE:To split a semiconductor substrate satisfactorily by a method wherein the substrate having a scribed groove is sandwiched in between plastic films and difference in air pressure is provided between both sides. CONSTITUTION:A substrate 2 having a scribe groove 1 on the under surface is sandwiched in between 2 sheets of pressure sensitive adhesive plastic films 3, 3' removing air bubbles. After placing the films 3, 3' between a vessel 5 and a lid 7 simultaneously discharging air 4, 6, the air is gradually introduced 6 into the lid side 7, then the substrate is divided into chips 8 because the films are curved. This constitution prevents the chips from being broken and damaged because no pressure is added by a hard roller.</p>
申请公布号 JPS5586134(A) 申请公布日期 1980.06.28
申请号 JP19780161622 申请日期 1978.12.23
申请人 FUJITSU LTD 发明人 TANIZAKI AKINORI;ANDOU NOBORU;NAKAO KUNIMICHI
分类号 H01L21/301;H01L21/78 主分类号 H01L21/301
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