发明名称 SEMICONDUCTOR DC CURRENT SWITCH CIRCUIT
摘要 PURPOSE:To prevent the malfunction at cut-off by short circuit between the gate and cathode of GTO through the use of anode voltage when GTO is OFF, in the semiconductor DC current switch circuit using gate turn off thyristor GTO. CONSTITUTION:Before the input signal is inputted to the input terminals 1, 2, GTO 8 is in OFF state and the transistor 6 is in ON state with the current flowing via the resistors 16, 13, 14, and the part between the cathode and gate of GTO 8 is shortened. When the turn on signal is fed, the transistor 5 is ON, and transistor 6 is OFF, and the input signal is given to the gate of GTO 8 and current flows to the cathode into ON, and charge is stored to the capacitor 18. When input signal is absent, the transistor 5 is OFF, the charge of the capacitor 18 flows via the transistor 6 and thyristor 7, GTO 8 is cut off and the dV/dt characteristics can remarkably be increased.
申请公布号 JPS5585140(A) 申请公布日期 1980.06.26
申请号 JP19780157409 申请日期 1978.12.22
申请人 HITACHI LTD 发明人 TOMITA SHIGEO
分类号 H03K17/732;H03K17/08 主分类号 H03K17/732
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