| 摘要 |
PURPOSE:To prevent generation of excessive compression pressure near an outer circumferencial portion of an upper electrode, by a method wherein upper and lower electrodes are each mounted to both sides of a semiconductor substrate of a compression type semiconductor device, and the end portions of a surface at the side where the upper electrode contacts with a semiconductor are rounded. CONSTITUTION:A compression type semiconductor device is formed in such a manner that discoid upper electrode 1 and lower electrode 2 are attached onto the both sides of an orbicular semiconductor 4 with solder 3. When applying compression pressure to the upper and lower electrodes, compression stress is produced on the whole surface of a surface where the semiconductor contacts with the upper electrode, but excessive compression stress is particularly generated to an outer circumferential portion of the upper electrode concentrically. Since the compression stress is lightened by rounding the end portion 1a of the surface where the upper electrode 1 contacts with the semiconductor 4, the breakage and cracks of the semiconductor can be prevented. It is preferable that the upper electrode is manufactured by copper or a copper alloy with excellent heat and electric conductivity to which carbon fibers are buried. |
