发明名称 WIDEEBAND PHOTO DETECTION CIRCUIT
摘要 PURPOSE:To obtain a good-S/N and high-band photoelectric conversion electric signal characteristic by inserting a positive-phase amplifier of an approximately voltage gain 1 in parallel to a photo diode and outputting a synthesized voltage of this amplifier and a load resistance. CONSTITUTION:Positive-phase amplifier A of an approximately voltage gain 1 is inserted in parallel to photo diode iS, and a synthesized voltage of amplifier A and load resistance R is outputted. As the result, the input impedance of amplifier A can be large, and load resistance R can be made of a large value. Since the input capacity of amplifier A intself is in parallel with load resistance R, the influence of the input capacity can be reduced. Consequently, a good-S/N and high-band photoelectric conversion electric signal characteristic can be obtained.
申请公布号 JPS5583823(A) 申请公布日期 1980.06.24
申请号 JP19780158940 申请日期 1978.12.21
申请人 SUMITOMO ELECTRIC INDUSTRIES;SEIKATSU EIZOU JIYOUHOU SYSTEM 发明人 FUJIMOTO TOKIO;OOHASHI KAZUO
分类号 G01J1/44;(IPC1-7):01J1/44 主分类号 G01J1/44
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