| 摘要 |
PURPOSE:To simplify the constitution of the internal matching circuit at the output side, by forming the DC blocking capacitor on the high concentration substrate of transistor other than the active region by using the dielectric substance such as oxide film and metal electrodes. CONSTITUTION:The transistor active region 25 consisting of the emitter, base and collector is formed on the upper part of the N<+> substrate 24, the dielectric substances 26a, 26b such as oxide film are formed on a part of the upper part of the substrate 24 and the metal electrodes 27a, 27b are formed on its upper part. Accordingly, capacitor is constitution between the substrate 24 and the electrodes 27a, 27b. Further to use the capacitor as DC blocking, the inductor is connected to the ground conductor of the capacitor and the package. Thus, this inductor performs the same operation as the inductor in parallel connection with the output side. |
