| 摘要 |
PURPOSE:To obtain a new, negative resistance element, by forming P<+>n<+>-junction between a source of a D-type FET and a surface layer of an E-type MOS diode, and by each connecting both a drain of the FET and a gate of the diode and both a gate of the FET and a substrate layer of the diode. CONSTITUTION:An n channel D-type MOS transistor Tn is formed in such a manner that an n<+>-type source 2, a drain 3 and an n-type inversion layer 4 (a channel) are made up on a p<->-type Si substrate 1, and that a gate electrode 6 is disposed onto these through a gate oxide film 5. Meanwhile, an n channel E-type MOS diode Dn is constituted to ensure that p<+>n<+>-junction is built up by mounting a high concentration surface p<+>-type layer 7 while contacting with the source 2, and that a gate electrode 9 is arranged onto the p<+>-type layer 7 through a gate oxide film 8. The drain of the Tn and a gate of the Dn are connected and used as one terminal 101, and the gate electrode 6 of the Tn and the substrate layer 1 of the Dn are connected and employed as the other terminal 102. The same applies for the case when making use of a p channel D-type MOS transistor or a junction FET. |
