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发明名称
摘要
PURPOSE:At the time of high/low change-over of the input levels of two MOS-type field effect transistors, currents are applied only momentarily... thereby minimizing power consumption.
申请公布号
JPS5522976(B2)
申请公布日期
1980.06.20
申请号
JP19750156656
申请日期
1975.12.26
申请人
发明人
分类号
H01L21/8234;H01L21/8236;H01L27/088;H01L29/78;H01L29/786;H03K17/687;H03K19/00;H03K19/094
主分类号
H01L21/8234
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代理人
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