发明名称 POLISHING METHOD FOR SINGLEECRYSTAL SUBSTRATE
摘要 PURPOSE:To obtain the flat surface of the non-distortion mirror in a simplified process and with a high accuracy of the shape and size by giving the simultaneous mechanical polishing and then the mechanical/chemical polishing to both surfaces after cutting the single-crystal for the magnetic bubble memory. CONSTITUTION:For instance, the simultaneous lapping is given to both surfaces of the slice wafer of the single-crystal of Gd3Ga3O12 via the abrasive grain of GC#3000. After this, the simultaneous MC polishing is given to the both surfaces on the polyurethane cloth and via the alkaline colloidal silica. Thus the substrate featuring the 10mu dispersion of thickness, the 10mu parallelism and the 3mu flatness can be obtained, to which no defect is observed on both surfaces through the etching test and the epitaxial growth test each. Such conventional processes can be omitted as the etching, the wax adhesion for polishing by the single surface, the elimination of the wax after polishing, etc. Furthermore, both the accuracy and the yield can be enhanced greatly.
申请公布号 JPS5580881(A) 申请公布日期 1980.06.18
申请号 JP19780154550 申请日期 1978.12.12
申请人 发明人
分类号 G11C11/14;B24B37/00;H01L21/304 主分类号 G11C11/14
代理机构 代理人
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