发明名称 PROCESS FOR MAKING FIELD EFFECT AND BIPOLAR TRANSISTORS ON THE SAME SEMICONDUCTOR CHIP
摘要 <p>PROCESS FOR MAKING FIELD EFFECT AND BIPOLAR TRANSISTORS ON THE SAME SEMICONDUCTOR CHIP A process and the resulting structure for making metal oxide silicon field effect transistors and vertical bipolar transistors on the same semiconductor chip with the devices being dielectrically isolated from each other. The process does not require an epitaxial layer. The bipolar devices have utility as cross-chip or offchip drivers or can be utilized for analog circuitry.</p>
申请公布号 CA1079864(A) 申请公布日期 1980.06.17
申请号 CA19770286133 申请日期 1977.09.06
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 ABBAS, SHAKIR A.;DOCKERTY, ROBERT C.
分类号 H01L29/78;H01L21/265;H01L21/331;H01L21/74;H01L21/762;H01L21/8249;H01L27/06;H01L29/73;(IPC1-7):01L21/70;01L27/06 主分类号 H01L29/78
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