发明名称 Charge coupled device with buried zones in a semiconductor substrate for use especially as a light sensor
摘要 A CCD is disclosed having a semiconductor substrate of a first conductivity type with a plurality of electrodes serially located above one planar surface thereof, a plurality of buried doped zones of a conductivity type opposite to that of the substrate and located in a plane spaced below a surface of the substrate. The rear edge of each electrode is in line with the front edge of a buried doped zone. The front edge of the same electrode overlaps the rear end of the next succeeding buried doped zone. The upper front corner of each electrode is bevelled.
申请公布号 US4208668(A) 申请公布日期 1980.06.17
申请号 US19780884902 申请日期 1978.03.09
申请人 SIEMENS AG 发明人 KRIMMEL, EBERHARD
分类号 H04N5/335;H01L21/339;H01L27/148;H01L29/10;H01L29/417;H01L29/76;H01L29/762;H01L29/765;H01L29/768;H01L29/772;(IPC1-7):H01L29/78;G11C19/28;H01L29/56 主分类号 H04N5/335
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