发明名称 |
Charge coupled device with buried zones in a semiconductor substrate for use especially as a light sensor |
摘要 |
A CCD is disclosed having a semiconductor substrate of a first conductivity type with a plurality of electrodes serially located above one planar surface thereof, a plurality of buried doped zones of a conductivity type opposite to that of the substrate and located in a plane spaced below a surface of the substrate. The rear edge of each electrode is in line with the front edge of a buried doped zone. The front edge of the same electrode overlaps the rear end of the next succeeding buried doped zone. The upper front corner of each electrode is bevelled.
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申请公布号 |
US4208668(A) |
申请公布日期 |
1980.06.17 |
申请号 |
US19780884902 |
申请日期 |
1978.03.09 |
申请人 |
SIEMENS AG |
发明人 |
KRIMMEL, EBERHARD |
分类号 |
H04N5/335;H01L21/339;H01L27/148;H01L29/10;H01L29/417;H01L29/76;H01L29/762;H01L29/765;H01L29/768;H01L29/772;(IPC1-7):H01L29/78;G11C19/28;H01L29/56 |
主分类号 |
H04N5/335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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