| 摘要 |
<p>PURPOSE:To increase heat dissipation, make slow the temperature gradient around a bump and prevent the occrrence of cracks at the time of bonding, by providing a metal layer on the lower part of a bump in a semiconductor device of leadout bump structure. CONSTITUTION:Al wiring 2 of a specified pattern is formed, via SiO2 film 3, on Si substrate 1, on which an element region is formed, and the entire surface is covered with SiO2 film 4. Hole 5 is cut in the specified region of film 4. Metal layer 6 in contact with exposed wiring 2 is extended to film 4 and retained. Bump 7 is provided on film 4 where wiring 2 is absent. In this structure, wiring 2 is expanded to the lower part of bump 7, and part 2' surrounding bump 7 is formed. This is used as a heat dissipation path. By this, heat is speedily dissipated at the time of bonding wire on bump 7, and the occurrence of cracks under the bump is prevented.</p> |
