VERTICAL JUNCTION GATE TYPE FIELD EFFECT TRANSISTOR,申请号JP19780153930-传众专利搜索

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发明名称	VERTICAL JUNCTION GATE TYPE FIELD EFFECT TRANSISTOR
摘要
申请公布号	JPS5580362(A)	申请公布日期	1980.06.17
申请号	JP19780153930	申请日期	1978.12.12
申请人	MATSUSHITA ELECTRIC IND CO LTD	发明人	KUBOTA MASABUMI;EZAKI TAKEYA
分类号	H01L29/80	主分类号	H01L29/80
代理机构		代理人
主权项
地址

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