| 摘要 |
PURPOSE:To check transition growth and prevent luminous output decrease by adding the fixed concentration of atoms of other III or V group having a larger atomic radius to an activity region of III-V groups semiconductors. CONSTITUTION:When In of III group, which has a larger atomic radius, is added to an activity layer of luminous elements of GaAs, GaAlAs, GaP, GaAsP series and the like, the transition growth speed is delayed, when the In concentration starts to exceed 10<13>cm<-3>, and the speed remarkably drops when exceeding 10<18>cm<-3> being delayed by 2-4 places than the normal growing speed at 10<20>cm<-3> thus making it possible to gain elements, which have adequate practical reliability. Likewise the adding of Sb of V group yields an equal effect. When the concentration exceeds 10<20>cm<-3> it can not be called a binary semiconductor but a ternary semiconductor. When in this way an element having a large atomic radius is put in the activity region, surrounding grating is strained but when transition growth is extended thereto, it balances so as to stop the growth and to prevent output deterioration. |
