| 摘要 |
PURPOSE:To secure a laser for oscillation in stable unified basic transverse mode and thus to obtain a light ouput of good linearity by an arrangement wherein the width of a current carrying region and that of a light emitting region are almost equalized each other, and an electrode is formed through a thin clad layer. CONSTITUTION:An n-Ga0.7Al0.3As clad layer 2, p-Ga0.92Al0.08As activated layer 3, p-Ga0.7Al0.3As clad layer 4, p-GaAs 5 are laminated on an n-GaAs 1. The layers 4 and 5 are partly etched with a mask w in width applied thereon, subjected to S diffusion with a mask s in width applied further to have a clad part 4b changed to n-type, then subjected to Zn diffusion to have an ohmic junction layer 6 provided thereon, and electrodes 7, 8 of ti-Pt-Au structure are arranged. The width s is kept thus a little larger than the width w, and electrodes are provided on a thin part of the clad layer 4, therefore a laser is secured for oscillation in stable unified basic mode, and a light emitting characteristic is obtainable in good linearity. |
