| 摘要 |
PURPOSE:To avoid cutout of a wiring film at a step, in etching a polycrystal conductive film provided on a semiconductor substrate by using an insulating-film mask; by cutting the both sides of an insulating film, which has been extended outward by side etching by means of jetting fluid. CONSTITUTION:An SiO2 film is deposited on an n-type Si substrate 21, and the portions of the regions which will become a source, a drain, and a gate are etched out, and an SiO2 film 22, a polycrystal Si film 23, and SiO2 film 24 are stacked on all over the surface and grown. Then, a photoresist-film mask 25 is provided on the film 24, the unnecessary portion of the film 24 is etched out, and the mask 25 is removed. Only the portion of the film 23 beneath the film 24 is left and the other portion of the film 23 is removed by etching, with the exposed film 24 as a mask. In this constitution, since the film 23 are side etched and the film 24 extends like an eave-shape, extended portions 24a and 24b can be cut out and removed by injecting a high-pressure water from a jet scrubber. Thereafter, a CVD film 26 containing n- type impurities are grown on all over the surface, and an Al wiring film 27 is deposited thereon.
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