发明名称 |
METHOD OF FORMING SCHOTTKY BARRIER UNIT |
摘要 |
A method of forming a self aligned guard ring surrounding a schottky barrier diode device without requiring an enlargement of the final schottky barrier device. The method involves creating an overhanging opening in a insulator layer overlying a semiconductor body to expose the schottky contact area on the surface of the semiconductor body, depositing a diffusion barrier material such as molybdenum in the opening, the deposit being of the same size as the smallest part of the overhanging opening so that a guard ring can be formed from a vapor by diffusion around the deposited barrier material. |
申请公布号 |
JPS5580367(A) |
申请公布日期 |
1980.06.17 |
申请号 |
JP19790126929 |
申请日期 |
1979.10.03 |
申请人 |
IBM |
发明人 |
RICHIYAADO FUOODO DORIIBUZU;JIYON FURANKU FURIIJIA;SANGU UKU KIMU;JIYON JIEEMUZU RAJIYA JIYUNIA |
分类号 |
H01L21/033;H01L21/22;H01L21/28;H01L21/331;H01L21/338;H01L29/47;H01L29/73;H01L29/872 |
主分类号 |
H01L21/033 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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