Controllable semiconductor rectifier with interference potential compensation

摘要

A controllable semiconductor rectifier which is subject to an interference potential and controllable by a control power comprises a first emitter layer, a first main electrode connected to the first emitter layer, a control base layer connected to the first emitter layer, a main base layer connected to the control base layer and a second emitter layer connected to the main base layer. A connection is established between a portion of the control base layer and the first emitter layer for applying a compensating potential to the first emitter layer for compensating the interference potential and a limiting non-linear component is connected between a portion of the control base layer and the first emitter layer for limiting the interference potential.