| 摘要 |
PURPOSE:To obtain a high dielectric strength by the structure such that a dielectric film is provided on the I<2>L forming region of a semiconductor substrate, an epitaxial layer is grown on the entire surface, a dielectric film is provided on a linear transistor forming region, an epitaxial layer is grown again, and different functional elements are produced by different levels of layers. CONSTITUTION:Two n<+>-type buried-in regions 4 are formed by diffusion on p- type Si substrate 1, and epitaxial n-type layer 2a is grown on the entire surface. On one region 4, SiO2 film 14 is provided on the surface of the I<2>L forming region only. Next, epitaxial n-type layer 2b is grown on the entire surface again. On the other region 4, the linear transistor forming region is covered with SiO2 film 15, n-type impurity ions are injected into exposed layer 2b, and n-type layer 16 is formed. Subsequently, film 15 is removed, and the surface where there are level differences is coated with SiO2 film 18 again, and openings are made at specified places. In this way, an IC is formed in which I<2>L and a linear transistor, with p<+>-type separation region 3, n-type collector region 13 of linear transistor, and deep I<2>L region 13. |
