发明名称 ION IMPLANTING METHOD
摘要 PURPOSE:To prevent a temp. rise of a plurality of samples without lowering treating capacity by implanting ions into the samples little by little by time sharing using electrostatic deflection. CONSTITUTION:Two sample support stands 10a, 10b are set in two directions of an angle to a beam axis from horizontal polarization electrodes 9a, 9b, and samples 11a, 11b are supported. A signal is given between polarization electrodes 8a, 8b and electrodes 9a, 9b so that ions are alternately implanted in a direction of angle thetaa to the beam axis for period ta and in a direction of angle thetab for period tb. At this time, crest value Vd of a scanning signal and the distance between samples 11a, 11b should be taken care, and such construction that heat exchange between stands 10a, 10b is prevented is adopted. By this method the energy applied by each ion beam per unit time is reduced to minimize a temp. rise of the samples.
申请公布号 JPS5579865(A) 申请公布日期 1980.06.16
申请号 JP19780153384 申请日期 1978.12.06
申请人 MITSUBISHI ELECTRIC CORP 发明人 AKASAKA YOUICHI;KIMATA MASAAKI
分类号 H01J37/317;C23C14/48;H01L21/265 主分类号 H01J37/317
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