| 摘要 |
PURPOSE:To form insulating protective film with a large thickness directly under a bump electrode and the second and the third insulating protective films almost equal in thickness to the conventional ones of the kind for preventing the cracking of the film directly under the electrode due to thermal stress. CONSTITUTION:An electrode take-out hole and a scribing-line groove 3 are formed by selectively removing the portions of the first insulating SiO2 film 2 provided on a silicon semiconductor substrate 1. Al wiring layers 4 and 5 with a given pattern are formed, and the second insulating SiO2 film 6 thereon by spattering method. The third insulating spattering SiO2 film 8 is selectively etched for removing thereof except a portion with a ringed pattern thereof which portion is surrounded by the outer-circumference of the electrode forming portion 7 of the layer 4 and a portion corresponding to the outer-circumference of an electrode 11 thereof. Metallic bump foundation film 9 is formed by depositing chrome (Cr) and copper (Cu) over the whole main surface of the substrate 1 in the mentioned order. A copper bump 11 is formed by providing thick Cu plating with an equal diameter to the outer diameter of the ringed pattern of the film 8 on the film 9. |
