发明名称 PELLETIZATION OF SEMICONDUCTOR WAFER
摘要 <p>PURPOSE:To use a silicon substrate, when giving cuts to the semiconductor side thereof with a dicing saw for pelletization, for elongating the lifetime of the saw and easily setting cutting depth. CONSTITUTION:A silicon substrate 1 is heated to 100-120 deg.C and coated with electron wax 2. A semiconductor wafer 3 to be pelletized is adhered to the substrate 1 with wax 2. The substrate 1 and wafer 3 are cooled while pressed for tight adhesion. The wafer 3 is set on a dicing machine and cut with a dicing saw. This cutting is made up to a part of the substrate 1, starting from the surface of the wafer 3, and the wafer 3 is divided into pellets 4.</p>
申请公布号 JPS5578544(A) 申请公布日期 1980.06.13
申请号 JP19780152545 申请日期 1978.12.08
申请人 NIPPON ELECTRIC CO 发明人 YOKOTA HIROSHI
分类号 H01L21/301;H01L21/78 主分类号 H01L21/301
代理机构 代理人
主权项
地址