| 摘要 |
PURPOSE:To obtain a homogeneous filmy silicon carbide or silicon coating without involving a cluster of carbon or silicon by processing silicon carbide obtained at high temperature through vapor phase process or decompression vapor phase process particularly. CONSTITUTION:A substrate 1 kept on a board 2 adjacently is sealed in a reaction vessel 3. The vessel 3 is arranged to excite, react to or heat a reactive gas and substrate according to high-frequency energy of a high-frequency heating furnace 4 and is provided with a heater 4 on the outside. Exhaustion is carried out from 6 through a valve 7 and a vacuum pump 8. The reactive gas arrives at an inlet 9, however, it is chemically activated, decomposed or made reactive by high-frequency inductive energy 10 at a position apart from the substrate. Namely, silicified gas and carbide gas are chemically activated or made reactive here, and then silicon carbide or silicon coating is formed on the substrate 1. |
