| 摘要 |
<p>A method of manufacturing semiconductor laser devices utilized in various kinds of communication systems. In the course of realizing semiconductor laser devices having a construction in which a heat sink (23) made of diamond or the like is placed on a heat radiating stud (21) which is a part of a sealed container for a semiconductor laser element (21), with the semiconductor laser element (21) being disposed on the heat sink (23), the method of manufacturing the laser device comprises the following steps: providing a layer of gold alloy (36) on the surface of the heat sink (23), placing the semiconductor laser element (24) on the layer of gold alloy (36) at a temperature below the eutectic point, heating the entire device at a temperature above the eutectic point, and cooling it thereby fixing the semiconductor laser element (24) onto the heat sink (23). The semiconductor laser devices manufactured by this method have a long life. </p> |
