| 摘要 |
1,103,184. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORPORATION. 12 May, 1965 [27 May, 1964], No. 19980/65. Heading HlK. In a planar semi-conductor device a junction is covered with an insulating layer on top of which is located an electrode. The circuit of the device is arranged so that the insulated electrode is biased negatively with respect to the region in which an inversion layer forms. As shown, Fig. 6, a planar PNP transistor is produced with an electrode 62 overlying the oxide layer 16 over junction 14. A diode may be similarly constructed by omitting the emitter diffusion, Fig. 5 (not shown). Similar devices of opposite configuration (i.e. with the impurity types of their regions reversed) may also be constructed, e.g. the diode of Fig. 1 (not shown), and in this case the electrode over the oxide layer and the outer (or only) one of the electrodes contacting the semi-conductor may be combined, Figs. 3 and 4 (not shown). The diode of Fig. 1 (not shown), may be produced in an N-type silicon wafer, the surface of which is masked by thermally oxidation or by decomposition of an organic siloxane compound, by diffused-in boron to form a P-type region. The electrodes are deposited by evaporation or plating. The semi-conductor material may also be germanium or an intermetallic compound. |
