摘要 |
PURPOSE:To make high-speed write possible by preventing the pulse voltage, which is generated according to time change of a write current, from flowing to the reading circuit side at an information write time. CONSTITUTION:Base-grounded transistors Q5 and Q6 are inserted between magnetic head coil L and reading circuit R. During write current supply from writing circuit W to coil L, Q5 and Q6 are turned off to prevent the pulse voltage, which is generated according to time change of the write current generated in coil L, from being transferred to reading circuit R. Then, during read of the voltage induced in coil L, operations of Q5 and Q6 are switched to the saturation state to read information. |