Semiconductor with capacitance increasing with voltage - has given electron or hole concentration profile and has series schottky diode

摘要

The device comprises a semiconductor chip which has donators, or acceptors and a given electron, or hole concn. profile with a diode connected in series. The electron concn. profile (n) has a lower max. value than the doner concn. profile (N+) and the overlaps it at the edges. The charge distribution is in addition to the capacitance of the diode which is connected in front or after the device. Pref. the device has an n type silicon disc with a thickness of 3um and a specific resistance of 250 Ohm cm given an As-Sb implantation and an epitaxial layer with a thickness of 10 um and the same specific resistance.