| 摘要 |
PURPOSE:To read out non-volatile memory by using accumulated charges within the floating gate to control carrier density present on the base surface of horizontal type pnp-transistor of an I<2>L. CONSTITUTION:n-Layer 22 on n<+>-layer 21 is formed with p-layers 23, 24, each covered with n<+>-layers 25, 26. A floating gate 28 is formed through an insulator film on the base of pnp-transistor of I<2>L consisting of the layers 24, 22, and 23. When no electrons are present in the gate 28, normal I<2>L function is performed. The presence of electrons in the gate 28 allows channel to be formed in the n-layer 22 under the gate thereby to increase the collector 25 current in the reverse npn- transistor. In this manner, the contents of memory can be read out by the changes in the collector current of npn-transistor. pn-Junction of word line (the layer 24) and bit line (the layer 26) undergoes breakdown to write in the gate. The desired word line is applied with voltage to produce bit line (the layer 25) current for reading. Ultraviolet radiation is used to erase the memory. |
