| 发明名称 |
Method of forming a mercury cadmium telluride photodiode |
| 摘要 |
A mercury cadmium telluride photodiode includes an n-type mercury cadmium telluride body with an accumulation layer proximate a first surface of the body. A p-type region is formed in the body at the first surface so that the n-type accumulation layer surrounds the p-type region at the first surface.
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| 申请公布号 |
US4206003(A) |
申请公布日期 |
1980.06.03 |
| 申请号 |
US19790005744 |
申请日期 |
1979.01.23 |
| 申请人 |
HONEYWELL INC |
发明人 |
KOEHLER, TOIVO |
| 分类号 |
H01L21/425;H01L31/103;H01L31/18;(IPC1-7):H01L27/14 |
主分类号 |
H01L21/425 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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