发明名称 PREPARATION OF SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To improve production recovery, by grinding same location on a semiconductor substrate 2 times mechanically so that it can be separated into each individual pellets without causing any crack. CONSTITUTION:A wafer 11 is stuck to a joining tape 12, and it is ground by a cutter 14 from the direction of A' leaving approximately 1/4 of the thickness. Likewise, it is ground from the direction of B' leaving approximately 1/4 of the thickness. At this time, since it is not completely cut off in the direction of A', force of the cutter is dispersed preventing occurrence of cracks in the horizontal direction. And then, it is completely cut off, in the direction of A', at a width I' narrower than a width G of the initial grinding groove 15. And then, like-wise, it is completely separated at a width J' in the direction of B'. At this time, as the second grinding width is norrower than the initial grinding width and the thickness of section to be ground is less than 1/4 of the wafer thickness, the force applied to the bottom of a pellet 16 becomes less than 1/4 of that of the conventional method, and therefore, occurrence of crack is almost prevented. It is possible in this way to improve production recovery of pellet.</p>
申请公布号 JPS5572055(A) 申请公布日期 1980.05.30
申请号 JP19780146172 申请日期 1978.11.27
申请人 NIPPON ELECTRIC CO 发明人 FUJISADA SHIYOUICHI;KUGUYAMA KAZUYA
分类号 H01L21/301;H01L21/78 主分类号 H01L21/301
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