发明名称 PREPARATION OF COMPOUND SEMICONDUCTOR LUMINOUS ELEMENT
摘要 <p>PURPOSE:To improve luminous power conversion efficiency by a method wherein, after selective etching, the luminous element proper is separated into pellets through processing and shaping in the state of resist film having been formed, followed by oxidation. CONSTITUTION:After being divided through dicing and the like into pellets of 0.3-0.4mm square without removing photo resist, the luminous element proper is heated, the peaked part of photo resist is bent, the film side is covered with photo resist, and aqua regina treatment is performed, thus the electrode film is protected, the element proper fracture layer or strain is removed by etching.</p>
申请公布号 JPS5571079(A) 申请公布日期 1980.05.28
申请号 JP19780144081 申请日期 1978.11.24
申请人 TOKYO SHIBAURA ELECTRIC CO 发明人 YASUDA MICHIROU;OGAWA CHIYOUJI;YAMASHITA MASATO
分类号 H01L33/30;H01L33/40;H01L33/62 主分类号 H01L33/30
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