NOVEL POLYIMIDE PATTERN FORMING METHOD

摘要

PURPOSE:To easily form the fine patterns of polyimide by lifting off a cured film of an org. aluminum compd. formed on a mask and selectively removing the coated film of the polyimide or the precursor thereof in the part where the cured film is not formed by a dry etching method. CONSTITUTION:The mask pattern 4 is formed on the coated film 3 of the polyimide or the precursor thereof and the soln. of the org. aluminum compd., org. zirconium compd. or org. silicon compd. is coated thereon and is cured; thereafter, the mask 4 is removed and the cured film 5 of the org. aluminum compd., org. zirconium compd. or org. silicon compd. is simultaneously lifted off. The coated film 3 of the polyimide or the precursor thereof in the part where the cured film 5 is not formed is then selectively removed by the dry etching method. The stage is thereby simplified and even the fine patterns are formed satisfactorily by the method which entirely obviates the contamination of semiconductors and the adverse influence on the human body.