发明名称 MANUFACTURE OF I2L SEMICONDUCTOR DEVICE
摘要 PURPOSE:To facilitate a layout change by forming a block with a domain having such pattern as is optimal to constitute an FF circuit and with a domain having such patern as is optimal to constitute a logical gate around said domain. CONSTITUTION:A single unit of gate circuit is provided in plural to each upper and lower domain of an FF circuit, and one block is obtained through providing a wiring channel 14 with which to wire the gate circuit on both upper and lower parts and a ground wiring part 15 beneath the lower wiring channel 14. An I<2>L semiconductor domain is formed by arranging the block in plural vertically and horizontally.
申请公布号 JPS5571060(A) 申请公布日期 1980.05.28
申请号 JP19780144164 申请日期 1978.11.24
申请人 HITACHI LTD 发明人 USAMI MITSUO
分类号 H01L27/082;H01L21/3205;H01L21/82;H01L21/822;H01L21/8226;H01L23/52;H01L27/02;H01L27/04;H01L27/118 主分类号 H01L27/082
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